Infineon IPA60R060P7 CoolMOS™ P7 Power Transistor: Datasheet, Application Notes, and Design Resources
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon Technologies with its CoolMOS™ P7 series, a benchmark in superjunction (SJ) MOSFETs. The IPA60R060P7 stands as a prime example, offering an exceptional blend of performance and cost-effectiveness for a wide array of switching applications.
This high-voltage transistor is engineered to minimize losses and maximize switching frequency. With a drain-source voltage (VDS) of 650 V and a maximum continuous drain current (ID) of 18.5 A, it is a robust choice for demanding circuits. Its most celebrated feature is its remarkably low typical on-state resistance (RDS(on)) of 0.060 Ω, which directly translates to reduced conduction losses and lower heat generation. This allows designers to create more compact power supplies by using smaller heat sinks or to push the limits of power output.
Key Datasheet Parameters
The datasheet for the IPA60R060P7 is the primary resource for any design engineer. Beyond the basic VDS, ID, and RDS(on) figures, critical parameters include:
Gate Threshold Voltage (VGS(th)): Typically 3.8 V, crucial for designing the gate drive circuitry.
Total Gate Charge (Qg): A low typical value of 60 nC ensures fast switching and low driving losses.
Intrinsic Body Diode: Characterized by its reverse recovery charge (Qrr), which is optimized for hard-switching and freewheeling operations.
Application Notes and Typical Use Cases
The IPA60R060P7 is exceptionally versatile. Infineon provides detailed application notes to guide engineers in implementing this MOSFET effectively. Key applications include:
Switched-Mode Power Supplies (SMPS): Particularly in power factor correction (PFC) stages and LLC resonant converters for servers, telecom, and industrial equipment.
Lighting: High-performance drivers for LED lighting systems, enabling higher efficiency and dimming capabilities.
Solar Inverters: Used in the DC-DC booster stage to maximize energy harvest from photovoltaic panels.
Motor Control: Inverter stages for controlling motors in industrial and appliance applications.
Essential Design Resources and Considerations
Successful implementation requires more than just the transistor itself. Infineon supports designers with a wealth of resources:
SPICE Models: Accurate simulation models are vital for predicting circuit behavior in tools like LTspice before prototyping.
Thermal Management Guidelines: Application notes detail PCB layout techniques for optimal cooling, such as utilizing sufficient copper area for the drain tab (DPAK package).
Gate Driving Recommendations: Proper gate driving is key to unleashing the full potential of the CoolMOS™ P7. Designers are advised to use dedicated gate driver ICs with suitable drive voltage (typically +12V/-3V to +15V/-3V) and low impedance to avoid parasitic turn-on and ensure crisp switching.
ICGOODFIND Summary
The Infineon IPA60R060P7 CoolMOS™ P7 is a high-performance 650 V superjunction MOSFET that sets a high standard for efficiency and robustness in modern power conversion systems. Its ultra-low RDS(on) and excellent switching characteristics make it an ideal choice for designers aiming to increase power density and reduce energy losses in applications like server PSUs, industrial SMPS, and solar inverters. Leveraging the comprehensive datasheet, application notes, and SPICE models is essential for optimizing design and achieving superior system performance.
Keywords: CoolMOS P7, High-Efficiency, Superjunction MOSFET, Power Supply Design, Low RDS(on)
