The Microchip SST39SF040-55-4I-NHE-T: A Robust 4Mbit Flash Memory Solution

In the realm of embedded systems and legacy design support, reliable non-volatile memory remains a cornerstone. The Microchip SST39SF040-55-4I-NHE-T stands out as a high-performance, high-reliability 4 Megabit CMOS Flash memory device organized as 512K x 8. This memory IC is engineered to meet the demanding requirements of a wide array of applications, from industrial controls and telecommunications hardware to automotive systems and consumer electronics.

A key attribute of this device is its superior performance, offered through a versatile 2.7-3.6V single power supply. This low-voltage operation makes it ideal for power-sensitive designs. The part number's "-55" suffix denotes a fast 55ns maximum access time, enabling efficient operation with high-speed processors without requiring wait states, thereby streamlining system performance.

The SST39SF040 leverages a sophisticated CMOS SuperFlash technology core. This technology is renowned for its lower power consumption compared to older EPROM or NOR Flash alternatives, featuring a typical active current of 10 mA and a very low standby current. Furthermore, it provides a durable minimum of 100,000 erase/write cycles per sector and over 100 years of data retention, ensuring long-term reliability for critical data storage.

The device offers a user-friendly interface with a JEDEC-standard command set for simplified programming and erasure control. It supports both byte-by-byte and faster sector-erase (4K Bytes) capabilities, providing flexibility for firmware updates. The entire chip can be erased in a single operation, facilitating repurposing and reprogramming in the factory or the field. It is offered in a space-efficient and robust 32-lead PLCC package, indicated by the "-NHE" package code, which is suitable for both surface-mount assembly and use in sockets for prototyping.

ICGOOODFIND: The Microchip SST39SF040-55-4I-NHE-T is a dependable and high-performance 4Mbit parallel Flash memory solution. Its combination of low power consumption, high speed, excellent endurance, and industry-standard packaging makes it a compelling choice for designers maintaining or upgrading systems that require a proven non-volatile memory technology.

Keywords: CMOS Flash Memory, 512K x 8, Sector-Erase, Low Power Consumption, 55ns Access Time