Infineon IDB09E60: A High-Performance 60V OptiMOS™ Power MOSFET for Automotive and Industrial Applications

The relentless drive for higher efficiency, greater power density, and enhanced reliability in power electronics is a defining challenge for designers in the automotive and industrial sectors. Addressing these demands head-on, Infineon Technologies introduces the IDB09E60, a 60V N-channel power MOSFET that sets a new benchmark for performance in a compact package. This device is engineered to deliver exceptional switching efficiency and robust power handling, making it an ideal solution for a wide array of demanding applications.

At the heart of the IDB09E60's superior performance is Infineon's advanced OptiMOS™ technology. This cutting-edge process technology achieves an outstandingly low on-state resistance (RDS(on)) of just 0.9 mΩ (max.) at 10 V. This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for smaller heatsinks or even passive cooling. The result is a system that can do more with less, saving both energy and valuable space.

The device is housed in a SuperSO8 package (PG-TDSON-8), which offers an excellent footprint-to-performance ratio. This compact package is designed for low parasitic inductance, further enhancing its high-speed switching capabilities. The IDB09E60 is exceptionally versatile, finding its primary use in DC-DC conversion stages within 48V automotive systems, such as Mild-Hybrid Electric Vehicles (MHEVs), where it manages power between the 48V and 12V boards. It is also perfectly suited for industrial power supplies, motor control, and battery management systems (BMS) that require efficient switching and high current-carrying capacity in a constrained space.

Beyond raw efficiency, the component is built for the rigorous environments of its target markets. It boasts AEC-Q101 qualification, ensuring it meets the stringent reliability standards for automotive applications. Its high avalanche ruggedness and broad SOA (Safe Operating Area) provide designers with a significant margin of safety, enhancing the longevity and durability of the end product.

ICGOOODFIND: The Infineon IDB09E60 is a premier 60V power MOSFET that exemplifies the progress in semiconductor technology. Its combination of an ultra-low RDS(on) of 0.9 mΩ, high switching performance in a compact SuperSO8 package, and AEC-Q101 qualification makes it a top-tier choice for engineers designing next-generation automotive and industrial power systems focused on maximizing efficiency and power density.

Keywords: OptiMOS™, Low RDS(on), Automotive Grade (AEC-Q101), Power Density, DC-DC Conversion.